Invention Grant
- Patent Title: Semiconductor device and method of manufacturing
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14569423Application Date: 2014-12-12
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Publication No.: US09299681B2Publication Date: 2016-03-29
- Inventor: Eiji Hayashi , Kyo Go , Kozo Harada , Shinji Baba
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-121063 20050419; JP2006-096999 20060331
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L21/48 ; H01L21/56 ; H01L21/683 ; H01L23/36 ; H01L23/498 ; H05K3/46 ; H05K1/03
Abstract:
Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained.As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
Public/Granted literature
- US20150099331A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-04-09
Information query
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