Invention Grant
US09299711B2 Field effect transistors including asymmetrical silicide structures and related devices
有权
场效应晶体管包括不对称硅化物结构和相关器件
- Patent Title: Field effect transistors including asymmetrical silicide structures and related devices
- Patent Title (中): 场效应晶体管包括不对称硅化物结构和相关器件
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Application No.: US14032769Application Date: 2013-09-20
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Publication No.: US09299711B2Publication Date: 2016-03-29
- Inventor: Tae Joong Song , Gyu Hong Kim , Jae Ho Park , Jong Hoon Jung
- Applicant: Tae Joong Song , Gyu Hong Kim , Jae Ho Park , Jong Hoon Jung
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A
- Priority: KR10-2012-0107381 20120926
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/11 ; H01L29/417 ; G11C11/419 ; G11C11/412
Abstract:
A fin Field Effect Transistor (finFET) can include a source region and a drain region of the finFET. A gate of the finFET can cross over a fin of the finFET between the source and drain regions. First and second silicide layers can be on the source and drain regions respectively. The first and second silicide layers can include respective first and second surfaces that face the gate crossing over the fin, where the first and second surfaces are different sizes.
Public/Granted literature
- US20140085966A1 FIELD EFFECT TRANSISTORS INCLUDING ASYMMETRICAL SILICIDE STRUCTURES AND RELATED DEVICES Public/Granted day:2014-03-27
Information query
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