Invention Grant
- Patent Title: Semiconductor device with non-linear surface
- Patent Title (中): 具有非线性表面的半导体器件
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Application No.: US14046987Application Date: 2013-10-06
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Publication No.: US09299768B2Publication Date: 2016-03-29
- Inventor: Xiaomeng Chen , Zhiqiang Wu , Shih-Chang Liu , Chien-Hong Chen
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L21/336 ; H01L21/76 ; H01L29/76 ; H01L21/00 ; H01L21/20 ; H01L29/04 ; H01L21/762 ; H01L29/66
Abstract:
A semiconductor device includes a channel having a first linear surface and a first non-linear surface. The first non-linear surface defines a first external angle of about 80 degrees to about 100 degrees and a second external angle of about 80 degrees to about 100 degrees. The semiconductor device includes a dielectric region covering the channel between a source region and a drain region. The semiconductor device includes a gate electrode covering the dielectric region between the source region and the drain region.
Public/Granted literature
- US20150097216A1 SEMICONDUCTOR DEVICE WITH NON-LINEAR SURFACE Public/Granted day:2015-04-09
Information query
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