Invention Grant
- Patent Title: Semiconductor substrate and method of fabricating the same
- Patent Title (中): 半导体衬底及其制造方法
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Application No.: US14114124Application Date: 2011-07-08
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Publication No.: US09299779B2Publication Date: 2016-03-29
- Inventor: Shiro Sakai
- Applicant: Shiro Sakai
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: JP2011-100321 20110428; KR10-2011-0053952 20110603
- International Application: PCT/KR2011/005019 WO 20110708
- International Announcement: WO2012/148039 WO 20121101
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L29/06 ; H01L33/22 ; H01L21/02 ; H01L33/00
Abstract:
Disclosed are a flat and thin semiconductor substrate, which is formed on a heterogeneous substrate to be easily lifted-off from the heterogeneous substrate, a semiconductor device including the same, and a method of fabricating the same. The semiconductor substrate includes a substrate having a plurality of semispherical protrusions arranged at a predetermined interval on a first plane, and a first semiconductor layer formed on the first plane of the substrate.
Public/Granted literature
- US20140042493A1 SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-02-13
Information query
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