Invention Grant
US09299806B2 High voltage drain-extended MOSFET having extra drain-OD addition
有权
具有额外漏极OD外加的高压漏极扩展MOSFET
- Patent Title: High voltage drain-extended MOSFET having extra drain-OD addition
- Patent Title (中): 具有额外漏极OD外加的高压漏极扩展MOSFET
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Application No.: US14715150Application Date: 2015-05-18
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Publication No.: US09299806B2Publication Date: 2016-03-29
- Inventor: Yi-Sheng Chen , Chen-Liang Chu , Shih-Kuang Hsiao , Fei-Yuh Chen , Kong-Beng Thei
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L29/417
Abstract:
An integrated circuit and a method of forming is provided. The method includes forming a first well in a substrate, the first well having a first conductivity type, and forming a first source/drain region in the first well, the first source/drain region having a second conductivity type. A resistance protection ring is formed on the substrate.
Public/Granted literature
- US20150249144A1 High Voltage Drain-Extended MOSFET Having Extra Drain-OD Addition Public/Granted day:2015-09-03
Information query
IPC分类:
