Invention Grant
- Patent Title: Insulating gate-type bipolar transistor
- Patent Title (中): 绝缘栅型双极晶体管
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Application No.: US14395914Application Date: 2012-05-29
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Publication No.: US09299818B2Publication Date: 2016-03-29
- Inventor: Shinji Aono , Tadaharu Minato
- Applicant: Shinji Aono , Tadaharu Minato
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2012/063687 WO 20120529
- International Announcement: WO2013/179379 WO 20131205
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/06 ; H01L29/10 ; H01L29/36 ; H01L29/423
Abstract:
An object of the present invention is to provide a trench gate type IGBT achieving both retention of withstand voltage and lowering of ON-state voltage and to provide a method for manufacturing the trench gate type IGBT. The IGBT according to the present invention is an SJ-RC-IGBT which includes a drift layer having super junction structure, and includes an IGBT area and an FWD area on the rear surface. In the IGBT according to the present invention, a first drift layer has an impurity concentration of 1×1015 atms/cm3 or higher and lower than 2×1016 atms/cm3, and a thickness of 10 μm or larger and smaller than 50 μm; and that a buffer layer has an impurity concentration of 1×1015 atms/cm3 or higher and lower than 2×1016 atms/cm3, and a thickness of 2 μm or larger and smaller than 15 μm.
Public/Granted literature
- US20150129930A1 INSULATING GATE-TYPE BIPOLAR TRANSISTOR Public/Granted day:2015-05-14
Information query
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