Invention Grant
US09299842B2 Fin transistor and semiconductor integrated circuit including the same
有权
鳍式晶体管和半导体集成电路包括相同的
- Patent Title: Fin transistor and semiconductor integrated circuit including the same
- Patent Title (中): 鳍式晶体管和半导体集成电路包括相同的
-
Application No.: US14026345Application Date: 2013-09-13
-
Publication No.: US09299842B2Publication Date: 2016-03-29
- Inventor: Sang-hoon Baek
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonngi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonngi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0102266 20120914
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; G06F17/50 ; H01L21/8238 ; H01L29/66 ; H01L27/092
Abstract:
Provided are a fin transistor including a plurality of fins and a semiconductor integrated circuit including a plurality of fin transistors. A width of at least one fin of the plurality of fins is different from widths of the other fins, and each width of the plurality of fins is individually determined based on the electrical characteristics of the fin transistor.
Public/Granted literature
- US20140077303A1 FIN TRANSISTOR AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SAME Public/Granted day:2014-03-20
Information query
IPC分类:
