Invention Grant
- Patent Title: Memory element and memory device
- Patent Title (中): 存储器元件和存储器件
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Application No.: US14263657Application Date: 2014-04-28
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Publication No.: US09299916B2Publication Date: 2016-03-29
- Inventor: Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2010-196418 20100902
- Main IPC: G11C11/14
- IPC: G11C11/14 ; H01L43/02 ; B82Y25/00 ; H01F10/16 ; H01F10/32 ; H01L27/22 ; H01L43/08 ; G11C11/16

Abstract:
There is disclosed a memory element including a memory layer that maintains information through the magnetization state of a magnetic material, a magnetization-fixed layer with a magnetization that is a reference of information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer. The storing of the information is performed by inverting the magnetization of the memory layer by using a spin torque magnetization inversion occurring according to a current flowing in the lamination direction of a layered structure having the memory layer, the intermediate layer, and the magnetization-fixed layer, the memory layer includes an alloy region containing at least one of Fe and Co, and a magnitude of an effective diamagnetic field which the memory layer receives during magnetization inversion thereof is smaller than the saturated magnetization amount of the memory layer.
Public/Granted literature
- US20140231943A1 MEMORY ELEMENT AND MEMORY DEVICE Public/Granted day:2014-08-21
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