Invention Grant
- Patent Title: High-speed inverter and method thereof
- Patent Title (中): 高速逆变器及其方法
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Application No.: US14487119Application Date: 2014-09-16
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Publication No.: US09300299B1Publication Date: 2016-03-29
- Inventor: Chia-Liang (Leon) Lin
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORP.
- Current Assignee: REALTEK SEMICONDUCTOR CORP.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K19/0948

Abstract:
A CMOS (complementary metal oxide semiconductor) inverter includes a PMOS (p-channel metal oxide semiconductor) transistor configured to receive a first input signal via a first input terminal and output a first output signal via a first output terminal, an NMOS (n-channel metal oxide semiconductor) transistor configured to receive a second input signal via a second input terminal and output a second output signal via a second output terminal, and a resistor configured to provide an isolation between the first output signal and the second output signal. In an embodiment, the first input signal is of a fast high-to-low transition but a slow low-to-high transition, and the second input signal is of a fast low-to-high transition but a slow high-to-low transition. A comparative method is also provided.
Public/Granted literature
- US20160079981A1 HIGH-SPEED INVERTER AND METHOD THEREOF Public/Granted day:2016-03-17
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