Invention Grant
- Patent Title: Method of fabricating integrated semiconductor device and structure thereof
- Patent Title (中): 集成半导体器件的制造方法及其结构
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Application No.: US14495940Application Date: 2014-09-25
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Publication No.: US09302904B2Publication Date: 2016-04-05
- Inventor: Hsueh-I Huang , Ming-Tung Lee , Shuo-Lun Tu
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B81C1/00
Abstract:
A method of fabricating an integrated semiconductor device, comprising: providing a substrate having a first region and a second region; and forming a semiconductor unit on the first region and forming a micro electro mechanical system (MEMS) unit on the second region in one process.
Public/Granted literature
- US20150044808A1 METHOD OF FABRICATING INTEGRATED SEMICONDUCTOR DEVICE AND STRUCTURE THEREOF Public/Granted day:2015-02-12
Information query
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