Invention Grant
- Patent Title: Nanodot and method for manufacturing the same
- Patent Title (中): 纳米点及其制造方法
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Application No.: US14293051Application Date: 2014-06-02
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Publication No.: US09303049B2Publication Date: 2016-04-05
- Inventor: Shu-Chen Hsieh , Pei-Ying Lin
- Applicant: National Sun Yat-sen University
- Applicant Address: TW Kaohsiung
- Assignee: NATIONAL SUN YAT-SEN UNIVERSITY
- Current Assignee: NATIONAL SUN YAT-SEN UNIVERSITY
- Current Assignee Address: TW Kaohsiung
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW102132114U 20130906
- Main IPC: G01N33/552
- IPC: G01N33/552 ; C07F7/18 ; A61K49/00 ; B82Y15/00

Abstract:
The present disclosure provides a method for manufacturing a nanodot, including: providing a hydrolysable silane, wherein the hydrolysable silane has one or more hydrolysable groups and one or more substituted or non-substituted hydrocarbon groups; and performing a one-step heat treatment to hydrolyze and condensate the hydrolysable silane to form a nanodot. The nanodot includes: a core, the core is selected from the group consisting of a semiconductor core or a metal core; and a self-assembled monolayer (SAM) including the substituted or non-substituted hydrocarbon groups, wherein the self-assembled monolayer is connected to the core by covalent bonds.
Public/Granted literature
- US20150073167A1 NANODOT AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-03-12
Information query
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