Invention Grant
US09303319B2 Gas injection system for chemical vapor deposition using sequenced valves
有权
使用顺序阀进行化学气相沉积的气体注入系统
- Patent Title: Gas injection system for chemical vapor deposition using sequenced valves
- Patent Title (中): 使用顺序阀进行化学气相沉积的气体注入系统
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Application No.: US12972270Application Date: 2010-12-17
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Publication No.: US09303319B2Publication Date: 2016-04-05
- Inventor: William E. Quinn , Eric A. Armour
- Applicant: William E. Quinn , Eric A. Armour
- Applicant Address: US NY Plainview
- Assignee: Veeco Instruments Inc.
- Current Assignee: Veeco Instruments Inc.
- Current Assignee Address: US NY Plainview
- Agency: Rauschenbach Patent Law Group, LLC
- Agent Kurt Rauschenbach
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/52

Abstract:
A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.
Public/Granted literature
- US20120156363A1 Gas Injection System for Chemical Vapor Deposition Using Sequenced Valves Public/Granted day:2012-06-21
Information query
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