Invention Grant
US09303969B2 Method for detecting pattern offset amount of exposed regions and detecting mark
有权
用于检测曝光区域的图案偏移量和检测标记的方法
- Patent Title: Method for detecting pattern offset amount of exposed regions and detecting mark
- Patent Title (中): 用于检测曝光区域的图案偏移量和检测标记的方法
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Application No.: US14487568Application Date: 2014-09-16
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Publication No.: US09303969B2Publication Date: 2016-04-05
- Inventor: Jian Guo , Weifeng Zhou , Xing Ming
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201010175934 20100514
- Main IPC: G01B7/00
- IPC: G01B7/00 ; G03F7/20 ; G01B7/14

Abstract:
A method for detecting a pattern offset amount of exposed regions comprises forming at least one pair of conductive detecting marks with a predetermined position relationship by a patterning process including two exposing processes; detecting an electrical characteristic of the at least one pair conductive detecting marks, if the detected electrical characteristic does not meet a predetermined position relationship, it is determined that the pattern offset amount of the exposed regions in two exposure steps is not qualified; and if the detected electrical characteristic meets the predetermined position relationship, it is determined that the pattern offset amount of the exposed regions in two exposure steps is qualified.
Public/Granted literature
- US20150002173A1 METHOD FOR DETECTING PATTERN OFFSET AMOUNT OF EXPOSED REGIONS AND DETECTING MARK Public/Granted day:2015-01-01
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