Invention Grant
US09303969B2 Method for detecting pattern offset amount of exposed regions and detecting mark 有权
用于检测曝光区域的图案偏移量和检测标记的方法

Method for detecting pattern offset amount of exposed regions and detecting mark
Abstract:
A method for detecting a pattern offset amount of exposed regions comprises forming at least one pair of conductive detecting marks with a predetermined position relationship by a patterning process including two exposing processes; detecting an electrical characteristic of the at least one pair conductive detecting marks, if the detected electrical characteristic does not meet a predetermined position relationship, it is determined that the pattern offset amount of the exposed regions in two exposure steps is not qualified; and if the detected electrical characteristic meets the predetermined position relationship, it is determined that the pattern offset amount of the exposed regions in two exposure steps is qualified.
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