Invention Grant
- Patent Title: Scintillator panel and manufacturing method therefor and radiation detector and manufacturing method therefor
- Patent Title (中): 闪烁面板及其制造方法及其辐射探测器及其制造方法
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Application No.: US14836199Application Date: 2015-08-26
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Publication No.: US09304212B2Publication Date: 2016-04-05
- Inventor: Atsuya Yoshida
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electron Tubes & Devices Co., Ltd.
- Applicant Address: JP Minato-ku JP Otawara-shi
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electron Tubes & Devices Co., Ltd.
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electron Tubes & Devices Co., Ltd.
- Current Assignee Address: JP Minato-ku JP Otawara-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-084734 20130415
- Main IPC: G01T1/202
- IPC: G01T1/202 ; G01T1/20 ; G21K4/00 ; C09K11/62 ; H01L31/18

Abstract:
A scintillator panel is provided with a substrate which transmits radiation ray and a phosphor layer which is present on the surface of the substrate and which is made of a thallium-activated cesium iodide that can convert an incident radiation to visible light. The phosphor layer is covered with a moisture-proof film. The phosphor layer is an alternating laminate composed of high thallium concentration layers and low thallium concentration layers that have a thallium concentration lower than that of the high-thallium concentration layers, wherein the thickness of one thallium concentration cycle in the lamination direction is 40 nm or less.
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