Invention Grant
- Patent Title: System and method for measurement of through silicon structures
- Patent Title (中): 通过硅结构测量的系统和方法
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Application No.: US13356336Application Date: 2012-01-23
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Publication No.: US09305341B2Publication Date: 2016-04-05
- Inventor: Christopher L. Claypool
- Applicant: Christopher L. Claypool
- Agent John R. Ross; John R. Ross, III
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T7/00 ; G01B11/22 ; G01N21/25 ; H01L21/66

Abstract:
A system and method for measurement of high aspect ratio through silicon via structures. A preferred embodiment includes a white light source and optical components adapted to provide a measurement beam which is nearly collimated with a measurement spot size of the same order of magnitude as the diameter (or effective diameter) of the TSV. These embodiments include a white light source with a variable aperture and other optical components chosen to control the angular spectrum of the incident light. In preferred embodiments the optical components include an automated XYZ stage and a system controller that are utilized to direct the illumination light so as to illuminate the top and bottom of TSV under analysis.
Public/Granted literature
- US20130148877A1 SYSTEM AND METHOD FOR MEASUREMENT OF THROUGH SILICON STRUCTURES Public/Granted day:2013-06-13
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