Invention Grant
US09305476B2 Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
有权
用于浅沟槽隔离（STI）应用的化学机械抛光（CMP）组合物及其制备方法
- Patent Title: Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
- Patent Title (中): 用于浅沟槽隔离（STI）应用的化学机械抛光（CMP）组合物及其制备方法
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Application No.: US14709609Application Date: 2015-05-12
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Publication No.: US09305476B2Publication Date: 2016-04-05
- Inventor: Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steven Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
- Applicant: AIR PRODUCTS AND CHEMICALS, INC.
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agent Lina Yang
- Main IPC: H01L21/302
- IPC: H01L21/302 ; G09G1/02 ; C09K3/14 ; H01L21/3105 ; H01L21/762 ; B24B1/00 ; C01F17/00
Abstract:
Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
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