Invention Grant
US09305604B2 Discrete three-dimensional vertical memory comprising off-die address/data-translator
有权
离散三维垂直存储器，包括片外地址/数据转换器
- Patent Title: Discrete three-dimensional vertical memory comprising off-die address/data-translator
- Patent Title (中): 离散三维垂直存储器，包括片外地址/数据转换器
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Application No.: US14707023Application Date: 2015-05-08
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Publication No.: US09305604B2Publication Date: 2016-04-05
- Inventor: Guobiao Zhang
- Applicant: Guobiao Zhang
- Applicant Address: CN HangZhou, ZheJiang US OR Corvallis
- Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee Address: CN HangZhou, ZheJiang US OR Corvallis
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C8/00 ; G11C5/14 ; G11C7/00 ; G11C8/14 ; G11C13/00 ; H01L23/00 ; H01L25/065 ; H01L25/10
Abstract:
The present invention discloses a discrete three-dimensional vertical memory (3D-MV). It comprises at least a 3D-array die and at least an A/D-translator die. The 3D-array die comprises a plurality of vertical memory strings. At least an address/data (A/D)-translator for the 3D-array die is located on the A/D-translator die instead of the 3D-array die. The 3D-array die and the A/D-translator die have substantially different back-end-of-line (BEOL) structures.
Public/Granted literature
- US20150269970A1 Discrete Three-Dimensional Vertical Memory Comprising Off-Die Address/Data-Translator Public/Granted day:2015-09-24
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