Invention Grant
US09305609B2 System and method of command based and current limit controlled memory device power up
有权
基于命令的系统和方法和限流控制存储器件上电
- Patent Title: System and method of command based and current limit controlled memory device power up
- Patent Title (中): 基于命令的系统和方法和限流控制存储器件上电
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Application No.: US12112831Application Date: 2008-04-30
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Publication No.: US09305609B2Publication Date: 2016-04-05
- Inventor: Ted Pekny , Jeff Yu
- Applicant: Ted Pekny , Jeff Yu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C7/20

Abstract:
Devices and systems for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.
Public/Granted literature
- US20090274000A1 SYSTEM AND METHOD OF COMMAND BASED AND CURRENT LIMIT CONTROLLED MEMORY DEVICE POWER UP Public/Granted day:2009-11-05
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