Invention Grant
- Patent Title: Sense amplifier for a memory cell with a fast sensing speed
- Patent Title (中): 用于具有快速感测速度的存储单元的感测放大器
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Application No.: US14736271Application Date: 2015-06-11
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Publication No.: US09305611B2Publication Date: 2016-04-05
- Inventor: Che-Wei Chang
- Applicant: eMemory Technology Inc.
- Applicant Address: TW Hsinchu Science Park, Hsin-Chu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsinchu Science Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C5/14 ; G11C16/30 ; G11C16/14 ; H02M3/07 ; G11C16/28 ; H02M1/14 ; H03K17/687

Abstract:
A sense amplifier comprises a cell current generator, a reference current generator, a first and a second charge/discharge elements, a first and a second voltage trigger circuits, and a data holder. The cell current generator is used to output a cell current of a memory cell. The reference current generator is used to output a duplicated reference current. The first and the second charge/discharge elements are used to convert the cell current and the duplicated reference current to voltage signals respectively. The first voltage trigger circuit is used to output a data signal according to a voltage signal outputted from the first charge/discharge element. The second voltage trigger circuit is used to output a hold control signal according to a voltage signal outputted from the second charge/discharge element. The data holder is used to hold a voltage level of the data signal according to the hold control signal.
Public/Granted literature
- US20160005486A1 SENSE AMPLIFIER FOR A MEMORY CELL WITH A FAST SENSING SPEED Public/Granted day:2016-01-07
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