Invention Grant
- Patent Title: Write assist circuit for write disturbed memory cell
- Patent Title (中): 用于写入干扰的存储单元的写辅助电路
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Application No.: US14089819Application Date: 2013-11-26
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Publication No.: US09305623B2Publication Date: 2016-04-05
- Inventor: Atul Katoch
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/24 ; G11C5/06 ; G11C7/22 ; G11C11/419 ; G11C7/10

Abstract:
A circuit comprises a first memory cell, a second memory cell, and a disturb control circuit. The first memory cell has a first port and a second port. The first port is associated with a first write assist circuit. The second port is associated with a second write assist circuit. The second memory cell has a third port and a fourth port. The third port is associated with a third write assist circuit. The fourth port is associated with a fourth write assist circuit. The disturb control circuit is configured to selectively turn on at least one of the first write assist circuit, the second write assist circuit, the third write assist circuit, or the fourth write assist circuit according to whether the first port, the second port, the third port, or the fourth port is determined to be write disturbed.
Public/Granted literature
- US20150146470A1 WRITE ASSIST CIRCUIT FOR WRITE DISTURBED MEMORY CELL Public/Granted day:2015-05-28
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