A resistance change memory has a resistance change device and a control circuit for controlling application of voltage to the resistance change device. The resistance change device has a first electrode, a second electrode, and a resistance change layer interposed between the first electrode and the second electrode. A material for the second electrode includes one of members selected from the group consisting of W, Ti, Ta, and nitrides thereof. During forming of the resistance change device, the control circuit performs a second forming treatment succeeding to a first forming treatment. The first forming treatment includes application of voltage such that the potential of the first electrode is higher than the potential of the second electrode. The second forming treatment includes application of voltage such that the potential of the second electrode is higher than the potential of the first electrode.