Invention Grant
- Patent Title: Resistance memory device and apparatus, fabrication method thereof, operation method thereof, and system having the same
- Patent Title (中): 电阻记忆装置及其装置及其制造方法，其操作方法及其制造方法
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Application No.: US14050069Application Date: 2013-10-09
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Publication No.: US09305642B2Publication Date: 2016-04-05
- Inventor: Dong Yean Oh , Woon Ha Yim , Mi Na Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0064580 20130605
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C13/00 ; H01L27/10
Abstract:
Resistance memory device and apparatus, a fabrication method thereof, an operation method thereof, and a system including the same are provided. The resistance memory device may include a data storage unit and a first interconnection connected to the data storage unit. A first access device may be connected in series with the data storage unit and a second access device may be connected in series with the first access device. A second interconnection may be connected to the second access device. A third interconnection may be connected to the first access device to drive the first access device and a fourth interconnection connected to the second access device to drive the second access device.
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