Invention Grant
US09305658B2 Finding optimal read thresholds and related voltages for solid state memory
有权
找到固态存储器的最佳读取阈值和相关电压
- Patent Title: Finding optimal read thresholds and related voltages for solid state memory
- Patent Title (中): 找到固态存储器的最佳读取阈值和相关电压
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Application No.: US14546545Application Date: 2014-11-18
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Publication No.: US09305658B2Publication Date: 2016-04-05
- Inventor: Xiangyu Tang , Lingqi Zeng , Jason Bellorado , Frederick K. H. Lee , Arunkumar Subramanian
- Applicant: SK hynix memory solutions inc.
- Applicant Address: US CA San Jose
- Assignee: SK hynix memory solutions inc.
- Current Assignee: SK hynix memory solutions inc.
- Current Assignee Address: US CA San Jose
- Agency: IP & T Group LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/26

Abstract:
A read is performed using a first iteration of a read threshold voltage that is set to a default voltage to obtain a first characteristic. A second iteration of the read threshold voltage is generated using the default voltage and an offset. A read is performed using the second iteration of the read threshold voltage to obtain a second characteristic. A third iteration of the read threshold voltage is generated using the first and second characteristics. A read is performed using the third iteration of the read threshold voltage to obtain a third characteristic. It is determined if the third characteristic is one of the two characteristics closest to a stored characteristic. If so, a fourth iteration of the read threshold voltage is generated using the two closest characteristics.
Public/Granted literature
- US20150138894A1 FINDING OPTIMAL READ THRESHOLDS AND RELATED VOLTAGES FOR SOLID STATE MEMORY Public/Granted day:2015-05-21
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