Invention Grant
- Patent Title: Method of forming a multi-level thin film capacitor
- Patent Title (中): 形成多层薄膜电容器的方法
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Application No.: US14506976Application Date: 2014-10-06
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Publication No.: US09305709B2Publication Date: 2016-04-05
- Inventor: Ivoyl Koutsaroff , Mark Vandermeulen , Andrew Cervin-Lawry , Atin J. Patel
- Applicant: BlackBerry Limited
- Applicant Address: CA Waterloo, On
- Assignee: BlackBerry Limited
- Current Assignee: BlackBerry Limited
- Current Assignee Address: CA Waterloo, On
- Agency: Guntin & Gust, PLC
- Agent Andrew Gust
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01G4/38 ; H01G4/33 ; H01L27/01 ; H05K1/16 ; H01G13/04 ; H05K1/03 ; H05K3/38

Abstract:
In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).
Public/Granted literature
- US20150093497A1 MULTI-LEVEL THIN FILM CAPACITOR ON A CERAMIC SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-04-02
Information query
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