Invention Grant
US09305750B2 Adjusting current ratios in inductively coupled plasma processing systems
有权
在电感耦合等离子体处理系统中调整电流比
- Patent Title: Adjusting current ratios in inductively coupled plasma processing systems
- Patent Title (中): 在电感耦合等离子体处理系统中调整电流比
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Application No.: US12728112Application Date: 2010-03-19
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Publication No.: US09305750B2Publication Date: 2016-04-05
- Inventor: Maolin Long , Seyed Jafar Jafarian-Tehrani
- Applicant: Maolin Long , Seyed Jafar Jafarian-Tehrani
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/306 ; H01J37/32 ; H05H1/46

Abstract:
A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.
Public/Granted literature
- US20100314048A1 ADJUSTING CURRENT RATIOS IN INDUCTIVELY COUPLED PLASMA PROCESSING SYSTEMS Public/Granted day:2010-12-16
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