Invention Grant
- Patent Title: Thickness change monitor wafer for in situ film thickness monitoring
- Patent Title (中): 厚度变化监测晶圆用于原位膜厚监测
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Application No.: US14195390Application Date: 2014-03-03
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Publication No.: US09305753B2Publication Date: 2016-04-05
- Inventor: Earl Jensen , Kevin O'Brien
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: G01B11/02
- IPC: G01B11/02 ; H01J37/32 ; G01B11/06

Abstract:
An etch rate monitor apparatus has a substrate, an optical element and one or more optical detectors mounted to a common substrate with the one or more detectors sandwiched between the substrate and optical element to detect changes in optical interference signal resulting from changes in optical thickness of the optical element. The optical element is made of a material that allows transmission of light of a wavelength of interest. A reference waveform and data waveform can be collected with the apparatus and cross-correlated to determine a thickness change. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Public/Granted literature
- US20140253928A1 THICKNESS CHANGE MONITOR WAFER FOR IN SITU FILM THICKNESS MONITORING Public/Granted day:2014-09-11
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