Invention Grant
- Patent Title: Method for manufacturing a nanowire structure
- Patent Title (中): 纳米线结构的制造方法
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Application No.: US13518259Application Date: 2010-12-22
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Publication No.: US09305766B2Publication Date: 2016-04-05
- Inventor: Lars Samuelson , Knut Deppert , Jonas Ohlsson , Martin Magnusson
- Applicant: Lars Samuelson , Knut Deppert , Jonas Ohlsson , Martin Magnusson
- Applicant Address: SE Lund
- Assignee: QUNANO AB
- Current Assignee: QUNANO AB
- Current Assignee Address: SE Lund
- Agency: The Marbury Law Group PLLC
- Priority: SE0951018 20091222
- International Application: PCT/SE2010/051461 WO 20101222
- International Announcement: WO2011/078780 WO 20110630
- Main IPC: H01L21/326
- IPC: H01L21/326 ; H01L21/00 ; H01L21/38 ; H01L21/302 ; H01L21/02 ; B82Y10/00 ; H01L29/06 ; B03C7/00 ; B82Y40/00

Abstract:
The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires (1) and applying an electrical field (E) over the population of nanowires (1), whereby an electrical dipole moment of the nanowires makes them align along the electrical field (E). Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate (2). The electrical field can be utilized in the deposition. Pn-junctions or any net charge introduced in the nanowires (1) may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.
Public/Granted literature
- US20130203242A1 METHOD FOR MANUFACTURING A NANOWIRE STRUCTURE Public/Granted day:2013-08-08
Information query
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