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US09305766B2 Method for manufacturing a nanowire structure 有权
纳米线结构的制造方法

Method for manufacturing a nanowire structure
Abstract:
The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires (1) and applying an electrical field (E) over the population of nanowires (1), whereby an electrical dipole moment of the nanowires makes them align along the electrical field (E). Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate (2). The electrical field can be utilized in the deposition. Pn-junctions or any net charge introduced in the nanowires (1) may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.
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