Invention Grant
- Patent Title: Prevention of metal loss in wafer processing
- Patent Title (中): 防止晶圆加工中的金属损失
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Application No.: US14137536Application Date: 2013-12-20
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Publication No.: US09305771B2Publication Date: 2016-04-05
- Inventor: Shakuntala Sundararajan , Nadia M. Rahhal-Orabi
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/02

Abstract:
An embodiment includes a method comprising: etching a material to expose a metal component in a metal layer, which is located on a substrate, while the substrate is in an etch chamber that is under vacuum; and performing an ash process on the metal component while the substrate is still in the etch chamber that is still under vacuum; wherein the material includes at least one of a dielectric and a mask and the metal component includes at least one of an interconnect, a via, and a contact. Other embodiments are described herein.
Public/Granted literature
- US20150179463A1 PREVENTION OF METAL LOSS IN WAFER PROCESSING Public/Granted day:2015-06-25
Information query
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