Invention Grant
US09305771B2 Prevention of metal loss in wafer processing 有权
防止晶圆加工中的金属损失

Prevention of metal loss in wafer processing
Abstract:
An embodiment includes a method comprising: etching a material to expose a metal component in a metal layer, which is located on a substrate, while the substrate is in an etch chamber that is under vacuum; and performing an ash process on the metal component while the substrate is still in the etch chamber that is still under vacuum; wherein the material includes at least one of a dielectric and a mask and the metal component includes at least one of an interconnect, a via, and a contact. Other embodiments are described herein.
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