Invention Grant
- Patent Title: Oxygen-doped gallium nitride crystal substrate
- Patent Title (中): 氧掺杂氮化镓晶体衬底
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Application No.: US14565109Application Date: 2014-12-09
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Publication No.: US09305776B2Publication Date: 2016-04-05
- Inventor: Kensaku Motoki , Masaki Ueno
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP.
- Priority: JP2001-113872 20010412
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/36 ; H01L21/02 ; C23C16/30 ; C30B23/00 ; C30B23/02 ; C30B25/00 ; C30B25/02 ; C30B29/40 ; C30B33/00 ; H01L29/207
Abstract:
Disclosed is a gallium nitride crystal substrate having a top surface, a bottom surface, regions of higher oxygen concentrations measured by SIMS, and other regions of lower oxygen concentrations measured by SIMS. The top surface is a C-plane surface. The ratio of the highest oxygen concentration to the lowest oxygen concentration is equal to or more than fifty.
Public/Granted literature
- US20150194309A1 OXYGEN-DOPED GALLIUM NITRIDE CRYSTAL SUBSTRATE Public/Granted day:2015-07-09
Information query
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