Invention Grant
- Patent Title: Method of fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14066436Application Date: 2013-10-29
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Publication No.: US09305788B2Publication Date: 2016-04-05
- Inventor: Masahiro Nishi
- Applicant: Sumitomo Electric Device Innovations, Inc.
- Applicant Address: JP Yokohama-shi
- Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee Address: JP Yokohama-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Trent B. Ostler
- Priority: JP2012-237440 20121029; JP2012-237446 20121029
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/768 ; H01L23/532 ; H01L29/66 ; H01L29/20
Abstract:
A method of fabricating a semiconductor device includes: forming a metal layer containing Al; forming an insulating film on the metal layer; forming an opening pattern to the insulating film, the metal layer being exposed in the opening pattern; and forming a wiring layer in the opening pattern, a first portion being disposed between an edge of the wiring layer and an edge of the opening pattern, a width of the first portion being 1 μm or less, and the metal layer being exposed in the first portion.
Public/Granted literature
- US20140120718A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2014-05-01
Information query
IPC分类:
