Invention Grant
US09305792B2 Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1)
有权
晶体硅晶片的纹理蚀刻剂组成和纹理蚀刻方法（1）
- Patent Title: Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1)
- Patent Title (中): 晶体硅晶片的纹理蚀刻剂组成和纹理蚀刻方法（1）
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Application No.: US13816308Application Date: 2011-08-12
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Publication No.: US09305792B2Publication Date: 2016-04-05
- Inventor: Hyung-Pyo Hong , Jae-Youn Lee , Dae-Sung Lim
- Applicant: Hyung-Pyo Hong , Jae-Youn Lee , Dae-Sung Lim
- Applicant Address: KR Iksan-si, Jeollabuk-do
- Assignee: DONGWOO FINE-CHEM CO., LTD.
- Current Assignee: DONGWOO FINE-CHEM CO., LTD.
- Current Assignee Address: KR Iksan-si, Jeollabuk-do
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: KR10-2010-0077621 20100812
- International Application: PCT/KR2011/005949 WO 20110812
- International Announcement: WO2012/021026 WO 20120216
- Main IPC: H01L21/302
- IPC: H01L21/302 ; C09K13/00 ; C09K13/06 ; H01L31/18 ; C09K13/08 ; C09K13/02 ; H01L31/0236
Abstract:
Disclosed herein is an etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition: (A) 0.1 to 20 wt % of an alkaline compound; (B) 0.1 to 50 wt % of a cyclic compound having a boiling point of 100° C. or more; (C) 0.00001 to 10 wt % of a silica-containing compound; and (D) residual water. The etching composition can maximize the absorbance of light of the surface of a crystalline silicon wafer.
Public/Granted literature
- US20130143403A1 TEXTURE-ETCHANT COMPOSITION FOR CRYSTALLINE SILICON WAFER AND METHOD FOR TEXTURE-ETCHING (1) Public/Granted day:2013-06-06
Information query
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