Invention Grant
US09305797B2 Polysilicon over-etch using hydrogen diluted plasma for three-dimensional gate etch
有权
使用氢稀释等离子体进行三维栅极蚀刻的多晶硅过蚀刻
- Patent Title: Polysilicon over-etch using hydrogen diluted plasma for three-dimensional gate etch
- Patent Title (中): 使用氢稀释等离子体进行三维栅极蚀刻的多晶硅过蚀刻
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Application No.: US14155571Application Date: 2014-01-15
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Publication No.: US09305797B2Publication Date: 2016-04-05
- Inventor: Radhika C. Mani , Nicolas Gani
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/308 ; H01L21/3065 ; H01L21/3213 ; H01L21/28 ; H01L29/66
Abstract:
Methods of polysilicon over-etch using hydrogen diluted plasma for three-dimensional gate etch are described. In an example, a method of forming a three-dimensional gate structure includes performing a main plasma etch on a masked polysilicon layer formed over a semiconductor fin. The method also includes, subsequently, performing a plasma over etch on the masked polysilicon layer based on a plasma generated from gaseous composition including hydrogen gas (H2).
Public/Granted literature
- US20140199849A1 POLYSILICON OVER-ETCH USING HYDROGEN DILUTED PLASMA FOR THREE-DIMENSIONAL GATE ETCH Public/Granted day:2014-07-17
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