Methods for forming a semiconductor device using masks with non-metallic portions

Invention Grant

US09305801B2 Methods for forming a semiconductor device using masks with non-metallic portions 有权

Title translation: 使用具有非金属部分的掩模形成半导体器件的方法

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Patent Title: Methods for forming a semiconductor device using masks with non-metallic portions
Patent Title (中): 使用具有非金属部分的掩模形成半导体器件的方法
Application No.: US13789244

Application Date: 2013-03-07
Publication No.: US09305801B2

Publication Date: 2016-04-05
Inventor: Sughyun Sung , Myeongcheol Kim , Myung-Hoon Jung
Applicant: Sughyun Sung , Myeongcheol Kim , Myung-Hoon Jung
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Myers Bigel & Sibley, P.A.
Priority: KR10-2012-0051828 20120516
Main IPC: H01L21/308
IPC: H01L21/308 ; H01L21/033 ; H01L21/311 ; H01L27/11 ; H01L21/768

Methods for forming a semiconductor device using masks with non-metallic portions

Abstract:

A method of forming a semiconductor device can be provided by forming a mask pattern including non-metallic first spaced-apart portions that extend in a first direction on a lower target layer and non-metallic second spaced-apart portions that extend in a second direction on the lower target layer to cross-over the non-metallic first spaced-apart portions at locations. The lower target layer can be etched using the mask pattern.

Abstract(Chinese):

可以通过形成包括在下目标层上沿第一方向延伸的非金属第一间隔部分和在第二方向上延伸的非金属第二间隔部分的掩模图案来提供形成半导体器件的方法在下部目标层上跨越位于非金属的第一间隔开的部分。可以使用掩模图案蚀刻下目标层。

Public/Granted literature

US20130309853A1 Methods for Forming a Semiconductor Device Using Masks with Non-Metallic Portions Public/Granted day:2013-11-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/308	.......应用掩膜的（H01L21/3063，H01L21/3065优先）