Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
- Patent Title (中): 等离子体处理装置和等离子体处理方法
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Application No.: US13185598Application Date: 2011-07-19
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Publication No.: US09305803B2Publication Date: 2016-04-05
- Inventor: Michikazu Morimoto , Yasuo Ohgoshi , Yuuzou Oohirabaru , Tetsuo Ono
- Applicant: Michikazu Morimoto , Yasuo Ohgoshi , Yuuzou Oohirabaru , Tetsuo Ono
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Baker Botts L.L.P.
- Priority: JP2011-076585 20110330
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H01L21/311 ; H01L21/67 ; H01J37/32 ; H01L21/66 ; H01L21/3065 ; H01L21/762
Abstract:
Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus.A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.
Public/Granted literature
- US20120252219A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2012-10-04
Information query
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