Invention Grant
- Patent Title: Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications
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Application No.: US14598472Application Date: 2015-01-16
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Publication No.: US09305806B2Publication Date: 2016-04-05
- Inventor: Xiaobo Shi , Krishna Murella , James Allen Schlueter , Jae Ouk Choo
- Applicant: AIR PRODUCTS AND CHEMICALS, INC.
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agent Lina Yang
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/321 ; B24B1/00 ; H01L21/306 ; H01L21/768 ; C09G1/00 ; C09G1/04 ; C09G1/06 ; C09K13/06 ; C09K3/14 ; C09G1/02
Abstract:
Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry compositions also offer the high selectivity for polishing copper relative to the other materials (such as Ti, TiN, Ta, TaN, and Si), suitable for through-silicon via (TSV) CMP process which demands high copper film removal rates.
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