Charge-encoded chiplets are produced using a sacrificial metal mask and associated fabrication techniques and materials that are compatible with typical semiconductor fabrication processes to provide each chiplet with two different (i.e., positive and negative) charge polarity regions generated by associated patterned charge-inducing material structures. A first charge-inducing material having a positive charge polarity is formed on a silicon wafer over previously-fabricated integrated circuits, then a sacrificial metal mask is patterned only over a portion of the charge-inducing material structure, and a second charge-inducing material structure (e.g., a self-assembling octadecyltrichlorosilane monolayer) is deposited having a negative charge polarity. The sacrificial metal mask is then removed to expose the masked portion of the first charge-inducing material structure, thereby providing the chiplet with both a positive charge polarity region and a negative charge polarity region.