Invention Grant
- Patent Title: Substrate processing apparatus and method of manufacturing semiconductor device
- Patent Title (中): 基板处理装置及半导体装置的制造方法
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Application No.: US12964921Application Date: 2010-12-10
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Publication No.: US09305820B2Publication Date: 2016-04-05
- Inventor: Kazuya Nabeta , Naoki Ukae , Mitsunori Takeshita
- Applicant: Kazuya Nabeta , Naoki Ukae , Mitsunori Takeshita
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2009-281531 20091211; JP2010-233952 20101018
- Main IPC: C23C16/458
- IPC: C23C16/458 ; H01L21/67 ; H01L21/687 ; H01J37/32
Abstract:
A stable and highly reliable device for detecting damage or contact failures of respective parts is provided. The device includes a processing chamber for processing a substrate; a heater for heating the substrate; a substrate support accommodating the heater and installed inside the processing chamber; a shaft for supporting the substrate support; a wire inserted through the shaft; a supporting unit for holding the wire; and a temperature detector connected to the supporting unit.
Public/Granted literature
- US20110139070A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-06-16
Information query
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