Invention Grant
- Patent Title: Curing photo resist for improving etching selectivity
- Patent Title (中): 固化光刻胶用于提高蚀刻选择性
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Application No.: US14134526Application Date: 2013-12-19
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Publication No.: US09305839B2Publication Date: 2016-04-05
- Inventor: Wen-Kuo Hsieh , Tsung-Hung Chu , Ming-Chung Liang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; G03F7/40 ; H01L21/027 ; H01L21/311
Abstract:
A method includes exposing and developing a negative photo resist, and performing a treatment on the negative photo resist using an electron beam. After the treatment, a layer underlying the photo resist is etched using the negative photo resist as an etching mask.
Public/Granted literature
- US20150179511A1 Curing Photo Resist for Improving Etching Selectivity Public/Granted day:2015-06-25
Information query
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