Invention Grant
- Patent Title: Etching method and etching apparatus of semiconductor wafer
- Patent Title (中): 半导体晶片的蚀刻方法和蚀刻装置
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Application No.: US13586721Application Date: 2012-08-15
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Publication No.: US09305850B2Publication Date: 2016-04-05
- Inventor: Kazuaki Kozasa , Tomonori Kawasaki
- Applicant: Kazuaki Kozasa , Tomonori Kawasaki
- Applicant Address: JP Omura-Shi, Nagasaki
- Assignee: SUMCO TECHXIV CORPORATION
- Current Assignee: SUMCO TECHXIV CORPORATION
- Current Assignee Address: JP Omura-Shi, Nagasaki
- Agency: Alston & Bird LLP
- Priority: JP2008-128944 20080515
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/76 ; H01L21/66 ; H01L21/311 ; H01L21/762
Abstract:
A method and an apparatus of etching a semiconductor wafer are provided. The etching apparatus of a semiconductor wafer having a marker inside includes: a monitoring device capable of monitoring a surface of the semiconductor wafer so as to detect the marker; a nozzle capable of jetting a mixed gas that contains hydrogen fluoride and ozone onto the surface of the semiconductor wafer; a regulator capable of adjusting at least one of hydrogen fluoride concentration and ozone concentration in the mixed gas; and a controller capable of determining whether the marker is detected by the monitoring device and terminating the etching process.
Public/Granted literature
- US20120305187A1 ETCHING METHOD AND ETCHING APPARATUS OF SEMICONDUCTOR WAFER Public/Granted day:2012-12-06
Information query
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