Invention Grant
- Patent Title: Post-passivation interconnect structure AMD method of forming same
- Patent Title (中): 后钝化互连结构AMD的方法形成
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Application No.: US13370895Application Date: 2012-02-10
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Publication No.: US09305856B2Publication Date: 2016-04-05
- Inventor: Hsien-Wei Chen , Yi-Wen Wu
- Applicant: Hsien-Wei Chen , Yi-Wen Wu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/31 ; H01L23/00
Abstract:
A semiconductor device including a dielectric layer formed on the surface of a post-passivation interconnect (PPI) structures. A polymer layer is formed on the dielectric layer and patterned with an opening to expose a portion of the dielectric layer. The exposed portion of the dielectric layer is then removed to expose a portion of the PPI structure. A solder bump is then formed over and electrically connected to the first portion of the PPI structure.
Public/Granted literature
- US20130207258A1 POST-PASSIVATION INTERCONNECT STRUCTURE AMD METHOD OF FORMING SAME Public/Granted day:2013-08-15
Information query
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