Invention Grant
- Patent Title: Method of manufacturing semiconductor device capable of enhancing bonding strength between connection terminal and electrode
- Patent Title (中): 能够提高连接端子与电极之间的接合强度的半导体装置的制造方法
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Application No.: US14063866Application Date: 2013-10-25
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Publication No.: US09305875B2Publication Date: 2016-04-05
- Inventor: Kozo Shimizu , Seiki Sakuyama , Toyoo Miyajima
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2013-013433 20130128
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/768 ; H01L23/00 ; H05K3/34 ; B23K35/24 ; H05K3/24
Abstract:
A method of manufacturing a semiconductor device includes forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element, providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc, and bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a melting point of the solder for a certain period of time.
Public/Granted literature
- US20140210086A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2014-07-31
Information query
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