Invention Grant
- Patent Title: Interconnects for semiconductor devices
- Patent Title (中): 半导体器件互连
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Application No.: US14061782Application Date: 2013-10-24
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Publication No.: US09305880B2Publication Date: 2016-04-05
- Inventor: Fu-Ming Huang , Han-Hsin Kuo , Chi-Ming Tsai , Liang-Guang Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L23/532 ; H01L21/321 ; H01L21/768

Abstract:
A semiconductor substructure with improved performance and a method of forming the same is described. The method includes providing a semiconductor dielectric layer having a recess formed therein; forming an interconnect structure with a metal liner and a conductive fill within the recess; and applying an electron beam treatment to the substructure.
Public/Granted literature
- US20150115447A1 INTERCONNECTS FOR SEMICONDUCTOR DEVICES Public/Granted day:2015-04-30
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