Invention Grant
- Patent Title: Integrated antenna structure and array
- Patent Title (中): 集成天线结构和阵列
-
Application No.: US14287338Application Date: 2014-05-27
-
Publication No.: US09305888B2Publication Date: 2016-04-05
- Inventor: Ho-Hsiang Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01Q1/38
- IPC: H01Q1/38 ; H01L23/66 ; H01L25/065 ; H01L25/16 ; H01Q1/22 ; H01Q7/00 ; H01L25/18 ; H01L23/00

Abstract:
Some embodiments relate to a semiconductor module having an integrated antenna structure that wirelessly transmits signals. The semiconductor module has a first die having a first far-back-end-of-the-line (FBEOL) metal layer with a ground plane connected to a ground terminal. A second die is stacked onto the first die and has a second FBEOL metal layer with an antenna exciting element that extends to a position that is vertically over the ground plane. One or more micro-bumps are vertically located between the first FBEOL metal layer and the second FBEOL metal layer. The one or more micro-bumps provide a radio frequency (RF) signal between the first FBEOL metal layer and the antenna exciting element of the second FBEOL metal layer. By using micro-bumps to connect the first and second die, the FBEOL metal layers are separated by a large spacing that provides for good performance of the integrated antenna structure.
Public/Granted literature
- US20140266919A1 INTEGRATED ANTENNA STRUCTURE AND ARRAY Public/Granted day:2014-09-18
Information query