Invention Grant
US09305897B2 Semiconductor package and method of mounting semiconductor die to opposite sides of TSV substrate
有权
半导体封装和将半导体裸片安装在TSV基板的相对侧上的方法
- Patent Title: Semiconductor package and method of mounting semiconductor die to opposite sides of TSV substrate
- Patent Title (中): 半导体封装和将半导体裸片安装在TSV基板的相对侧上的方法
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Application No.: US14138646Application Date: 2013-12-23
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Publication No.: US09305897B2Publication Date: 2016-04-05
- Inventor: DaeSik Choi , JongHo Kim , HyungMin Lee
- Applicant: STATS ChipPAC, Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L23/00 ; H01L21/683 ; H01L23/498 ; H01L23/538 ; H01L23/552 ; H01L25/065 ; H01L25/10 ; H01L25/00 ; H01L23/522 ; H01L23/48 ; H01L23/31 ; H01L23/367 ; H05K3/00

Abstract:
A semiconductor device includes a wafer level substrate having a plurality of first conductive vias formed through the wafer level substrate. A first semiconductor die is mounted to the wafer level substrate. A first surface of the first semiconductor die includes contact pads oriented toward a first surface of the wafer level substrate. A first encapsulant is deposited over the first semiconductor die. A second semiconductor die is mounted to the wafer level substrate. A first surface of the second semiconductor die includes contact pads oriented toward a second surface of the wafer level substrate opposite the first surface of the wafer level substrate. A second encapsulant is deposited over the second semiconductor die. A plurality of bumps is formed over the plurality of first conductive vias. A second conductive via can be formed through the first encapsulant and connected to the first conductive via. The semiconductor packages are stackable.
Public/Granted literature
- US20140110860A1 Semiconductor Package and Method of Mounting Semiconductor Die to Opposite Sides of TSV Substrate Public/Granted day:2014-04-24
Information query
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