Invention Grant
US09305898B2 Semiconductor device with combined power and ground ring structure
有权
具有组合电源和接地环结构的半导体器件
- Patent Title: Semiconductor device with combined power and ground ring structure
- Patent Title (中): 具有组合电源和接地环结构的半导体器件
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Application No.: US14161706Application Date: 2014-01-23
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Publication No.: US09305898B2Publication Date: 2016-04-05
- Inventor: Kong Bee Tiu , Ruzaini B. Ibrahim , Wen Shi Koh
- Applicant: Kong Bee Tiu , Ruzaini B. Ibrahim , Wen Shi Koh
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Agent Charles E. Bergere
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/495
Abstract:
A semiconductor device includes a lead frame, and an integrated circuit die. The lead frame has a flag for supporting the die and leads that surround that flag and die. The lead frame also has ground ring that surrounds the flag and die. First bond wires electrically connect the die to the lead frame leads. An insulating layer is disposed on the ground ring, and a power layer is disposed on the insulating layer. The semiconductor device further includes second bond wires that connect the die to the ground ring and third bond wires that connect the die to the power layer.
Public/Granted literature
- US20150206834A1 SEMICONDUCTOR DEVICE WITH COMBINED POWER AND GROUND RING STRUCTURE Public/Granted day:2015-07-23
Information query
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