Invention Grant
- Patent Title: 3D semiconductor apparatus for initializing channels
- Patent Title (中): 用于初始化通道的3D半导体装置
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Application No.: US14244459Application Date: 2014-04-03
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Publication No.: US09305909B2Publication Date: 2016-04-05
- Inventor: Jae Bum Ko
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0166562 20131230
- Main IPC: H01L25/04
- IPC: H01L25/04 ; H01L25/065 ; H01L25/075 ; H01L25/18 ; G11C7/14 ; H01L23/00
Abstract:
A semiconductor apparatus includes a plurality of stack dies which are formed with a predetermined number of channels. The semiconductor apparatus also includes a base die configured to initialize a channel not electrically coupled with the stack dies.
Public/Granted literature
- US20150187744A1 3D SEMICONDUCTOR APPARATUS FOR INITIALIZING CHANNELS Public/Granted day:2015-07-02
Information query
IPC分类:
