Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14706601Application Date: 2015-05-07
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Publication No.: US09305910B2Publication Date: 2016-04-05
- Inventor: Masafumi Horio , Kyohei Fukuda , Motohito Hori , Yoshinari Ikeda
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agent Manabu Kanesaka
- Priority: JP2012-026340 20120209
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/02 ; H01L25/18 ; H01L23/538 ; H01L25/07 ; H01L23/00 ; H01L25/065 ; H01L23/373 ; H01L23/498 ; H01L23/433 ; H01L23/31

Abstract:
A semiconductor device includes an insulating substrate having a first conductive pattern on a first insulating substrate; a first semiconductor element having one surface fixed to the first conductive pattern; a printed circuit board having a conductive layer on a second insulating substrate and a plurality of metal pins fixed to the conductive layer; and a third insulating substrate. A portion of pins constituting the metal pins is fixed to other surface of the first semiconductor element, and the printed circuit board with the metal pins is sandwiched between the insulating substrate having the first conductive pattern and the third insulating substrate.
Public/Granted literature
- US20150243640A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-08-27
Information query
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