Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14628724Application Date: 2015-02-23
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Publication No.: US09305926B2Publication Date: 2016-04-05
- Inventor: Hiroaki Taketani
- Applicant: PS4 Luxco S.a.r.l.
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2011-034896 20110221
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/762 ; H01L29/06 ; H01L29/08 ; H01L29/423 ; H01L29/78 ; H01L29/10 ; H01L29/49

Abstract:
A semiconductor device includes a semiconductor device may include, but is not limited to, a semiconductor substrate, an isolation electrode, a gate electrode, a gate insulating film, and a first insulating film. The semiconductor substrate has a first groove and a second groove. An isolation electrode is positioned in the first groove. The gate electrode is positioned in the second groove. The gate insulating film is adjacent to the gate electrode. The first insulating film is adjacent to the isolation electrode. The isolation electrode is greater in threshold voltage than the gate electrode.
Public/Granted literature
- US20150171089A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-06-18
Information query
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