A method of manufacturing a semiconductor device is provided. The method comprises a first step of forming a first hole opened to a side of a first surface of a semiconductor substrate, the semiconductor substrate including the first surface and a second surface opposite to the first surface, a step of filling the first hole with an insulating member, a step of forming, on the first surface, an insulating film that covers the insulating member, a step of forming a second hole in the insulating film and the insulating member, a step of filing the second hole with a conductive member, a step of thinning the semiconductor substrate from the side of the second surface of the semiconductor substrate so as to expose the insulating member.