Invention Grant
US09305964B1 Optoelectronic devices with back contact 有权
具有背面接触的光电器件

Optoelectronic devices with back contact
Abstract:
A semiconductor structure includes an optoelectronic device located in one region of a substrate. A dielectric material is located adjacent and atop the optoelectronic device. A top contact is located within a region of the dielectric material and contacting a topmost surface of the optoelectronic device. A bottom metal contact is located beneath the optoelectronic device and lining a pair of openings located with other regions of the dielectric material, wherein a portion of the bottom metal contact contacts an entire bottommost surface of the optoelectronic device.
Information query
Patent Agency Ranking
0/0